摘要:Synthesis and growth of two-dimensional (2D) materials have been extensively investigated in order to achieve high quality, scalability, and reduce the complexity of process in recent years. Mechanical exfoliation is a quite unpractical method owing to the scale limitation while chemical vapor deposition (CVD) on metal substrates must be combined with the manual transfer step, which seriously damages the materials for device applications. Ultrahigh vacuum (UHV) growth cannot accomplish the high production and reduce the cost of process. The conditions of some particular syntheses are quite difficult to be performed, thus they do not have potential for commercialization. This study announces that a facile synthesis method, so called plasma and/or implantation assisted process, has been successfully utilized to synthesize several single-elemental 2D materials. The process divided into plasma and/or implantation and thermal treatment almost solves all of the issues mentioned above. In addition to demonstrate the feasibility of plasma and/or implantation assisted process for synthesis of the single-elemental 2D materials, superior properties of these 2D materials were measured for seeking real applications.